HL6312G/13g algainp laser diodes ade-208-190g (z) 8th edition dec. 2000 description the HL6312G/13g are 0.63 m m band algainp laser diodes with a multi-quantum well (mqw) structure. wavelength is equal to he-ne gas laser. they are suitable as light sources in bar code readers, laser levelers and various other types of optical equipment. hermetic sealing of the package achieves high reliability. features visible light output: l p = 635 nm typ (nearly equal to he-ne gas laser) optical output power: 5 mw cw low operating voltage: 2.7 v max single longitudinal mode built-in photodiode for monitoring laser output tm mode oscillation ld pd 1 3 internal circuit HL6312G internal circuit hl6313g package type HL6312G/13g: g2 ld pd 1 3 2 2
HL6312G/13g 2 absolute maximum ratings (t c = 25?) item symbol rated value unit optical output power p o 5mw pulse optical output power p o(pulse) 6 * mw ld reverse voltage v r(ld) 2v pd reverse voltage v r(pd) 30 v operating temperature topr ?0 to +50 c storage temperature tstg ?0 to +85 c note: pulse condition : pulse width 1 m s , duty 50% optical and electrical characteristics (t c = 25?) item symbol min typ max unit test conditions optical output power p o 5 mw kink free threshold current ith 20 45 70 ma operating current i op ?585ma p o = 5 mw operating voltage v op 2.7 v p o = 5 mw beam divergence parallel to the junction q //5811 deg. p o = 5 mw beam divergence parpendicular to the junction q^ 25 31 37 deg. p o = 5 mw astigmatism a s ? m mp o = 5 mw, na = 0.55 lasing wavelength l p 625 635 640 nm p o = 5 mw monitor current i s 0.2 0.4 0.8 ma p o = 5 mw, v r(pd) = 5 v
HL6312G/13g 3 typical characteristic curves 5 4 3 2 1 0 0 20 40 60 80 100 forward current, i f (ma) optical output power, p o (mw) optical output power vs. forward current t c = 0 c 50 c 25 c 0.5 0.4 0.3 0.2 0.1 0 05 134 2 optical output power, p o (mw) monitor current vs. optical output power monitor current, i s (ma) t c = 25 c t c = 25 c v r(pd) = 5 v - 40 - 20 0 20 40 angle, q (deg.) relative intensity parallel perpendicular p o = 5 mw p o = 5 mw p o = 3 mw p o = 1 mw far field pattern 625 650 630 645 640 wavelength, l p (nm) lasing spectrum relative intensity 635
HL6312G/13g 4 typical characteristic curves (cont) 100 0 1020304050 case temperature, t c ( c) case temperature, t c ( c) case temperature, t c ( c) threshold current, ith (ma) threshold current vs. case temperature 10 0.5 0.4 0.3 0.2 0.1 0 10 20 30 40 50 slope efficiency, h s (mw/ma) slope efficiency vs. case temperature 0 case temperature, t c ( c) 050 10 40 30 20 1 0.8 0.6 0.4 0.2 0 monitor current vs. case temperature monitor current, i s (ma) p o = 5 mw v r(pd) = 5 v 638 636 634 632 630 010 50 40 30 20 lasing wavelength vs. case temperature lasing wavelength, l p (nm) 640 642 644 646 p o = 5 mw
HL6312G/13g 5 typical characteristic curves (cont) 20 15 10 5 0 01 3 2 optical output power, p o (mw) optical output power, p o (mw) astigmatism vs. optical output power astigmatism, a s ( m m) t c = 25 c na = 0.55 45 500 400 300 200 100 0 05 134 2 polarization ratio vs. optical output power polarization ratio na = 0.25 na = 0.4 t c = 25 c 0 1200 200 1000 600 400 electrostatic destruction (mil method) applied voltage (v) survival rate 800 20 40 0 60 80 100 ld forward n = 10pcs judgment : d i o 3 10% ld reverse n = 10pcs judgment : d i o 3 10% (%) 0 1000 3000 2000 electrostatic destruction (mil method) applied voltage (v) survival rate 4000 20 40 0 60 80 100 (%)
HL6312G/13g 6 package dimensions hitachi code jedec eiaj mass (reference value) ld/g2 1.1 g unit: mm 1 2 3 1 2 3 9.0 +0 ?.025 f 1.0 0.1 0.4 +0.1 ? (0.65) (90 ) f 7.2 +0.3 ?.2 f f 6.2 0.2 ( 2.0) f emitting point 2.45 1.5 0.1 9 1 3 ? 0.45 0.1 3.5 0.2 0.3 glass f 2.54 0.35
HL6312G/13g 7 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. 1. the laser light is harmful to human body especially to eye no matter what directly or indirectly. the laser beam shall be observed or adjusted through infrared camera or equivalent.
HL6312G/13g 8 hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
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